powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com single igbtmod? nx-series module 600 amperes/600 volts QIS0660004 1 04/10 rev. 0 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of one igbt transis - tor in a single configuration with a reverse connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: alsic baseplate low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell outline drawing and circuit diagram dimensions inches millimeters a 5.98 152.0 b 2.44 62.0 c 0.67 17.0 d 5.39 137.0 e 4.79 121.7 f 4.330.02 110.00.5 g 3.89 99.0 h 3.72 94.5 j 0.53 13.5 k 0.15 3.8 l 0.28 7.25 m 0.30 7.75 n 1.95 49.54 p 0.9 22.86 q 0.55 14.0 r 0.87 22.0 s 0.67 17.0 t 0.48 12.0 u 0.24 6.0 v 0.16 4.2 w 0.37 6.5 x 0.83 21.14 y m6 m6 dimensions inches millimeters z 1.53 39.0 aa 1.970.02 50.00.5 ab 2.26 57.5 ac 0.22 dia. 5.5 dia. ad 0.67+0.04/-0.02 17.0+1.0/-0.5 ae 0.51 13.0 af 0.27 7.0 ag 0.03 0.8 ah 0.81 20.5 aj 0.12 3.0 ak 0.14 3.5 al 0.21 5.4 am 0.49 12.5 an 0.15 3.81 ap 0.05 1.15 aq 0.025 0.65 ar 0.29 7.4 as 0.24 6.2 at 0.17 dia. 4.3 dia. au 0.10 dia. 2.5 dia. av 0.08 dia. 2.1 dia. aw 0.06 1.5 ax 0.49 12.5 th th1 (1) th2 (2) g1(1 5) e1(1 6) c(22) e(23) e(24) c(48) c(47) ntc det ail "b" a d e f j j ar z aa ab b ah aj ax aw al am ak ae ad as an aq af ag at au av ap g h p c x t t s s q r q n v u u w ac (4 pla ces) m kk l l y (4 pla ces) det ail "a" det ail "b" det ail "a" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 *all pin dimensions wi thin a t olerance of 0.5
QIS0660004 single igbtmod? nx-series module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 04/10 rev. 0 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol QIS0660004 units power device junction temperature t j -40 to 150 c storage temperature t stg -55 to 130 c mounting torque, m5 mounting screws 31 in-lb mounting torque, m6 main terminal screws 40 in-lb module weight (typical) 220 grams baseplate flatness, on centerline x, y (see below) 0 ~ +100 m isolation voltage, ac 1 minute, 60hz sinusoidal v iso 2500 volts inverter sector collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 55c) *1*4*9 i c 600 amperes peak collector current (pulse) *3 i cm 1200 amperes emitter current (t c = 25c) *1*4*9 i e *2 600 amperes peak emitter current (pulse) *3 i em *2 1200 amperes maximum collector dissipation (t c = 25c) *1*4 p c 1580 watts *1 case temperature (t c ) and heatsink temperature (t f ) are defined on the surface of the baseplate and heatsink at just under the chip. *2 i e , i em , v ec , t rr and q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond t j(max) rating. *9 use both of each main terminal (collector and emitter) to connect external wiring. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 77.5 88.6 77.5 88.6 78.6 0 21.8 35.2 21.8 35.2 44.2 dimensions in mm (tolerance: 1mm) igbt fwdi ntc thermistor chip location (top view) 0 th chip location (top view) baseplate flatness measurement point heatsink side ? : concave + : convex ? : concave x y + : convex heatsink side
QIS0660004 single igbtmod? nx-series module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 04/10 rev. 0 electrical and mechanical characteristics, t j = 25c unless otherwise specifed inverter sector characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 5 6 7 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c *5 1.7 2.1 volts i c = 600a, v ge = 15v, t j = 125c *5 1.9 volts i c = 600a, v ge = 15v, chip 1.6 volts input capacitance c ies 69.0 nf output capacitance c oes v ce = 10v, v ge = 0v 8.0 nf reverse transfer capacitance c res 2.4 nf total gate charge q g v cc = 300v, i c = 600a, v ge = 15v 1600 nc inductive turn-on delay time t d(on) 700 ns load turn-on rise time t r v cc = 300v, i c = 600a, 250 ns switch turn-off delay time t d(off) v ge = 15v, 700 ns time turn-off fall time t f r g = 1.0 , i e = 600a, 600 ns reverse recovery time t rr *2 inductive load switching operation 300 ns reverse recovery charge qrr *2 11 c emitter-collector voltage v ec *2 i e = 600a, v ge = 0v, t j = 25c *5 2.0 2.8 volts i e = 600a, v ge = 0v, t j = 125c *5 1.95 volts i e = 600a, v ge = 0v, chip 1.9 volts thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units module lead resistance r lead main termnals-chip (per switch) 0.6 m thermal resistance, junction to case** r th(j-c) q per igbt *1 0.079 c/w thermal resistance, junction to case** r th(j-c) d per fwdi *1 0.132 c/w contact thermal resistance** r th(c-f) case to heatsink (per 1 module) 0.015 c/w thermal grease applied *1*7 internal gate resistance r gint t c = 25c 2.1 3.0 3.9 t c = 125c 4.2 6.0 7.8 external gate resistance r g 1.0 10 ntc thermistor sector , t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units zero power resistance r t c = 25c *1 4.85 5.00 5.15 k deviation of resistance ? r/r t c = 100c, r 100 = 493 *1 C7.3 +7.8 % b constant b (25/50) b = (inr 1 C inr 2 ) / (1/t 1 C 1/t 2 ) *6 3375 k power dissipation p 25 t c = 25c *1 10 mw *1 case temperature (t c ) and heatsink temperature (t f ) are defined on the surface of the baseplate and heatsink at just under the chip. *2 i e , i em , v ec , t rr and q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *5 pulse width and repetition rate should be such as to cause negligible temperature rise. *6 r 1 : resistance at absolute temperature t 1 (k), r 2 : resistance at absolute temperature t 2 (k), t(k) = t(c) + 273.15 *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)].
QIS0660004 single igbtmod? nx-series module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 04/10 rev. 0 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 2 10 1 10 -1 10 0 10 1 0 1 3 2 4 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 2 10 4 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 1200a i c = 600a i c = 240a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13 15 9 8 t j = 25 c 1200 800 1000 400 200 600 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (inverter part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 1200 800 1000 400 200 600 v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 4 10 1 10 2 10 3 10 1 10 2 switching time, (ns) half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 1.0? t j = 125c inductive load t f 10 3 gate resistance, r g , (?) 10 4 10 0 10 1 10 3 10 2 switching time, (ns) switching time vs. gate resistance (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v i c = 600a t j = 125c inductive load t f 10 2 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 500 1000 2000 1500 2500 v cc = 300v v cc = 200v i c = 600a emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 1 10 2 10 1 10 2 10 3 v cc = 300v v ge = 15v r g = 1.0? t j = 25c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns)
QIS0660004 single igbtmod? nx-series module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 5 04/10 rev. 0 time, (s) transient thermal impedance characteristics (inverter part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.066c/w (igbt) r th(j-c) = 0.11c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 10 0 10 1 v cc = 300v v ge = 15v i c = 600a t j = 125c inductive load 10 2 switching loss vs. gate resistance (inverter part - typical) e on e off gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 0 10 1 v cc = 300v v ge = 15v i e = 600a t j = 125c inductive load 10 2 reverse recovery switching loss vs. gate resistance (inverter part - typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 10 2 10 1 10 0 v cc = 300v v ge = 15v r g = 1.0? t j = 125c inductive load 10 3 reverse recovery switching loss vs. emitter current (inverter part - typical) e rr e rr v cc = 300v v ge = 15v r g = 1.0? t j = 125c inductive load e on e off collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 10 2 10 1 10 0 10 3 switching loss vs. collector current (inverter part - typical)
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